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FDS8928A Dual-Channel MOSFET

FDS8928A Description

July 1998 FDS8928A Dual N & P-Channel Enhancement Mode Field Effect Transistor General .
These dual N- and P -Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS techn.

FDS8928A Features

* N-Channel 5.5 A,30 V, RDS(ON)=0.030 Ω @ VGS=4.5 V RDS(ON)=0.038 Ω @ VGS=2.5 V. P-Channel -4 A,-20 V, RDS(ON)=0.055 Ω @ VGS=-4.5 V RDS(ON)=0.072 Ω @ VGS=-2.5 V. High density cell design for extremely low RDS(ON). High power and current handling capability in a widely used surface mount package. Dual

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Dual-Channel MOSFET Fairchild Semiconductor
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