FDS8936S Datasheet, Mosfet, Fairchild Semiconductor

FDS8936S Features

  • Mosfet Low gate charge. 5.0 A, 30 V. RDS(ON) = 0.040 Ω @ VGS = 10 V. High density cell design for extremely low R DS(ON). High power and current handling capability in a widely used surface mo

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Part number:

FDS8936S

Manufacturer:

Fairchild Semiconductor

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269.55kb

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📄 Datasheet

Description:

Dual n-channel mosfet. SO-8 N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS te

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FDS8936S Application

  • Applications such as disk drive motor control, battery powered circuits where fast switching, low in-line power loss, and resistance to transients a

TAGS

FDS8936S
Dual
N-Channel
MOSFET
Fairchild Semiconductor

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