Datasheet4U Logo Datasheet4U.com

FDS8936S

Dual N-Channel MOSFET

FDS8936S Features

* Low gate charge. 5.0 A, 30 V. RDS(ON) = 0.040 Ω @ VGS = 10 V. High density cell design for extremely low R DS(ON). High power and current handling capability in a widely used surface mount package. Dual MOSFET in surface mount package. SOT-23 SuperSOTTM-6 SuperSOTTM-8 SO-8 SOT-223 SOIC-16 5 6

FDS8936S General Description

SO-8 N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to provide superior switching performance and minimize on-state resistance. These devices are particula.

FDS8936S Datasheet (269.55 KB)

Preview of FDS8936S PDF

Datasheet Details

Part number:

FDS8936S

Manufacturer:

Fairchild Semiconductor

File Size:

269.55 KB

Description:

Dual n-channel mosfet.

📁 Related Datasheet

FDS8936A - Dual N-Channel MOSFET (Fairchild Semiconductor)
May 1998 FDS8936A Dual N-Channel Enhancement Mode Field Effect Transistor General Description SO-8 N-Channel enhancement mode power field effect tran.

FDS8934A - Dual P-Channel MOSFET (Fairchild Semiconductor)
May 1998 FDS8934A Dual P-Channel Enhancement Mode Field Effect Transistor General Description SO-8 P-Channel enhancement mode power field effect tran.

FDS8935 - MOSFET (Fairchild Semiconductor)
FDS8935 Dual P-Channel PowerTrench® MOSFET FDS8935 Dual P-Channel PowerTrench® MOSFET -80 V, -2.1 A, 183 mΩ November 2010 Features General Descrip.

FDS8935 - Dual P-Channel MOSFET (ON Semiconductor)
FDS8935 Dual P-Channel PowerTrench® MOSFET FDS8935 Dual P-Channel PowerTrench® MOSFET -80 V, -2.1 A, 183 mΩ Features „ Max rDS(on) = 183 mΩ at VGS =.

FDS89141 - Dual N-Channel MOSFET (Fairchild Semiconductor)
FDS89141 Dual N-Channel Shielded Gate PowerTrench® MOSFET September 2015 FDS89141 Dual N-Channel Shielded Gate PowerTrench® MOSFET 100 V, 3.5 A, 62 .

FDS89161 - Dual N-Channel MOSFET (Fairchild Semiconductor)
FDS89161 Dual N-Channel Shielded Gate PowerTrench® MOSFET September 2015 FDS89161 Dual N-Channel Shielded Gate PowerTrench® MOSFET 100 V, 2.7 A, 105.

FDS89161LZ - Dual N-Channel MOSFET (Fairchild Semiconductor)
FDS89161LZ Dual N-Channel Shielded Gate PowerTrench® MOSFET September 2015 FDS89161LZ Dual N-Channel Shielded Gate PowerTrench® MOSFET 100 V, 2.7 A,.

FDS8926A - Dual N-Channel MOSFET (Fairchild Semiconductor)
February 1998 FDS8926A Dual N-Channel Enhancement Mode Field Effect Transistor General Description SO-8 N-Channel enhancement mode power field effect.

TAGS

FDS8936S Dual N-Channel MOSFET Fairchild Semiconductor

Image Gallery

FDS8936S Datasheet Preview Page 2 FDS8936S Datasheet Preview Page 3

FDS8936S Distributor