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FGA50N100BNT 50A NPT-Trench IGBT CO-PAK

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Description

FGA50N100BNT 1000V, 50A NPT-Trench IGBT CO-PAK March 2009 FGA50N100BNT 1000V, 50A NPT-Trench IGBT CO-PAK tm .
Trench insulated gate bipolar transistors (IGBTs) with NPT technology show outstanding performance in conduction and switching characteristics as well.

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Features

* High Speed Switching
* Low Saturation Voltage : VCE(sat) = 2.5 V @ IC = 60A
* High Input Impedance

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