Part number:
FGA50T65SHD
Manufacturer:
Fairchild Semiconductor
File Size:
1.99 MB
Description:
Igbt.
* Maximum Junction Temperature : TJ =175oC
* Positive Temperature Co-efficient for Easy Parallel Operating
* High Current Capability
* Low Saturation Voltage: VCE(sat) =1.6 V(Typ.) @ IC = 50 A
* 100% of the Parts Tested for ILM(1)
* High Input Impedanc
FGA50T65SHD Datasheet (1.99 MB)
FGA50T65SHD
Fairchild Semiconductor
1.99 MB
Igbt.
📁 Related Datasheet
FGA5065ADF - Field Stop Trench IGBT
(Fairchild Semiconductor)
FGA5065ADF — 650 V, 50 A Field Stop Trench IGBT
FGA5065ADF
650 V, 50 A Field Stop Trench IGBT
August 2015
Features
• Maximum Junction Temperature :.
FGA50N100BNT - 50A NPT-Trench IGBT CO-PAK
(Fairchild Semiconductor)
FGA50N100BNT 1000V, 50A NPT-Trench IGBT CO-PAK
March 2009
FGA50N100BNT
1000V, 50A NPT-Trench IGBT CO-PAK
tm
Features
• High Speed Switching • Low .
FGA50N100BNTD - IGBT
(Fairchild Semiconductor)
FGA50N100BNTD — 1000 V NPT Trench IGBT
November 2013
FGA50N100BNTD
1000 V NPT Trench IGBT
General Description
Using Fairchild's proprietary trench .
FGA50N100BNTD2 - IGBT
(Fairchild Semiconductor)
FGA50N100BNTD2 — 1000 V NPT Trench IGBT
FGA50N100BNTD2
1000 V NPT Trench IGBT
Features
• High Speed Switching • Low Saturation Voltage : VCE(sat) = 2.
FGA50N60LS - IGBT
(Fairchild Semiconductor)
FGA50N60LS
FGA50N60LS
IGBT
General Description
Fairchild's LS series product of Insulated Gate Bipolar Transistors (IGBTs) provides low conduction .
FGA50S110P - 50A Shorted-anode IGBT
(Fairchild Semiconductor)
FGA50S110P — 1100 V, 50 A Shorted-anode IGBT
FGA50S110P
1100 V, 50 A Shorted-anode IGBT
August 2013
Features
• Intrinsic Anti-parallel Diode for So.
FGA04 - Photodiodes
(Thorlabs)
435 Route 206 • P.O. Box 366 Newton, NJ 07860-0366
FGA04 InGaAs Photodiode
High Responsivity Low Capacitance: High Speed Fiber Compatible with FC Con.
FGA10 - Photodiodes
(Thorlabs)
435 Route 206 • P.O. Box 366 Newton, NJ 07860-0366
PH. 973-579-7227 FAX 973-300-3600
FGA10 InGaAs Photodiode --High Responsivity
--Low Capacitance: .