FGA50N100BNTD Datasheet, Igbt, Fairchild Semiconductor

FGA50N100BNTD Features

• Igbt
• High Speed Switching
• Low Saturation Voltage : VCE(sat) = 2.5 V @ IC = 60 A
• High Input Impedance
• Built-in Fast Recovery Diode Application UPS, We

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FGA50N100BNTD

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Fairchild Semiconductor

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📄 Datasheet

Description:

Igbt. Using Fairchild's proprietary trench design and advanced NPT technology, the 1000V NPT IGBT offers superior conduction and switching

FGA50N100BNTD Application

• Applications Features
• High Speed Switching
• Low Saturation Voltage : VCE(sat) = 2.5 V @ IC = 60 A
• High Input Impedanc

TAGS

FGA50N100BNTD

Fairchild Semiconductor

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