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FGA50N100BNTD Datasheet - Fairchild Semiconductor

IGBT

FGA50N100BNTD Features

* High Speed Switching

* Low Saturation Voltage : VCE(sat) = 2.5 V @ IC = 60 A

* High Input Impedance

* Built-in Fast Recovery Diode Application UPS, Welder, Induction Heating, Microwave Oven C GCE TO-3P Absolute Maximum Ratings TC = 25C unless otherwise noted

FGA50N100BNTD General Description

Using Fairchild's proprietary trench design and advanced NPT technology, the 1000V NPT IGBT offers superior conduction and switching performances, high avalanche ruggedness and easy parallel operation. This device offers the optimum performance for hard switching application such as UPS, welder appl.

FGA50N100BNTD Datasheet (246.69 KB)

Preview of FGA50N100BNTD PDF

Datasheet Details

Part number:

FGA50N100BNTD

Manufacturer:

Fairchild Semiconductor

File Size:

246.69 KB

Description:

Igbt.

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TAGS

FGA50N100BNTD IGBT Fairchild Semiconductor

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