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FQA160N08 80V N-Channel MOSFET

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Description

FQA160N08 * N-Channel QFET® MOSFET FQA160N08 N-Channel QFET® MOSFET 80 V, 160 A, 7 mΩ June 2014 .
Features This N-Channel enhancement mode power MOSFET is. 160 A, 80 V, RDS(on) = 7 mΩ (Max.

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Features

* This N-Channel enhancement mode power MOSFET is
* 160 A, 80 V, RDS(on) = 7 mΩ (Max. ) @ VGS = 10 V, produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET ID = 80 A technology has been especially tailored to reduce on-state
* L

Applications

* 17 D G D S TO-3PN G S Absolute Maximum Ratings TC = 25°C unless otherwise noted. Symbol Parameter VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain-Source Voltage Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) Drain Current - Pulsed Gate-Source Voltag

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