FQA19N20C Datasheet (Fairchild Semiconductor)

FQA19N20C, 200V N-Channel MOSFET

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse i

FQA19N20C Features

* 21.8A, 200V, RDS(on) = 0.17Ω @VGS = 10 V

* Low gate charge ( typical 40.5 nC)

* Low Crss ( typical 85 pF)

* Fast switching

* 100% avalanche tested

* Improved dv/dt capability G DS TO-3PN FQA Series D { G{

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* { S Absolute Maxim