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FQA19N20C

200V N-Channel MOSFET

FQA19N20C Features

* 21.8A, 200V, RDS(on) = 0.17Ω @VGS = 10 V

* Low gate charge ( typical 40.5 nC)

* Low Crss ( typical 85 pF)

* Fast switching

* 100% avalanche tested

* Improved dv/dt capability G DS TO-3PN FQA Series D { G{

* ◀▲

* { S Absolute Maxim

FQA19N20C General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse i.

FQA19N20C Datasheet (585.90 KB)

Preview of FQA19N20C PDF

Datasheet Details

Part number:

FQA19N20C

Manufacturer:

Fairchild Semiconductor

File Size:

585.90 KB

Description:

200v n-channel mosfet.

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TAGS

FQA19N20C 200V N-Channel MOSFET Fairchild Semiconductor

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