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FQA19N60 Datasheet - Fairchild Semiconductor

FQA19N60 600V N-Channel MOSFET

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy .

FQA19N60 Features

* 18.5 A, 600 V, RDS(on) = 380 mΩ (Max.) @ VGS = 10 V, ID = 9.3 A

* Low Gate Charge (Typ. 70 nC)

* Low Crss (Typ. 35 pF)

* 100% Avalanche Tested D G DS TO-3PN G Absolute Maximum Ratings TC = 25oC unless otherwise noted. Symbol Parameter VDSS ID IDM VGSS EAS IA

FQA19N60_FairchildSemiconductor.pdf

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Datasheet Details

Part number:

FQA19N60

Manufacturer:

Fairchild Semiconductor

File Size:

1.42 MB

Description:

600v n-channel mosfet.

FQA19N60 Distributor

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FQA19N60 FQA19N60 600V N-Channel MOSFET Fairchild Semiconductor