FQA19N60 Datasheet (Fairchild Semiconductor)

FQA19N60, 600V N-Channel MOSFET

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology.

This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy

FQA19N60 Features

* 18.5 A, 600 V, RDS(on) = 380 mΩ (Max.) @ VGS = 10 V, ID = 9.3 A

* Low Gate Charge (Typ. 70 nC)

* Low Crss (Typ. 35 pF)

* 100% Avalanche Tested D G DS TO-3PN G Absolute Maximum Ratings TC = 25oC unless otherwise noted. Symbol Parameter VDSS ID IDM VGSS EAS IA