FQAF44N08 Datasheet - Fairchild Semiconductor

FQAF44N08 80V N-Channel MOSFET

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse i.

FQAF44N08 Features

* 35.6A, 80V, RDS(on) = 0.034Ω @VGS = 10 V Low gate charge ( typical 38 nC) Low Crss ( typical 90 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating D ! " G! G D S ! " " "

FQAF44N08_FairchildSemiconductor.pdf