FQAF44N10 Datasheet - Fairchild Semiconductor

FQAF44N10 100V N-Channel MOSFET

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the .

FQAF44N10 Features

* 33A, 100V, RDS(on) = 0.039Ω @VGS = 10 V Low gate charge ( typical 48 nC) Low Crss ( typical 85 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating D ! " G! G D S ! " " "

FQAF44N10_FairchildSemiconductor.pdf