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FQAF6N80

800V N-Channel MOSFET

FQAF6N80 Features

* 4.4A, 800V, RDS(on) = 1.95Ω @VGS = 10 V Low gate charge ( typical 31 nC) Low Crss ( typical 14 pF) Fast switching 100% avalanche tested Improved dv/dt capability D ! " G! G D S 3 " " 5 TO-3PF FQAF Series ! S Absolute Maximum Rating

FQAF6N80 General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse i.

FQAF6N80 Datasheet (661.21 KB)

Preview of FQAF6N80 PDF

Datasheet Details

Part number:

FQAF6N80

Manufacturer:

Fairchild Semiconductor

File Size:

661.21 KB

Description:

800v n-channel mosfet.

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TAGS

FQAF6N80 800V N-Channel MOSFET Fairchild Semiconductor

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