FQB2P25 Datasheet - Fairchild Semiconductor

FQB2P25 250V P-Channel MOSFET

These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse i.

FQB2P25 Features

* -2.3A, -250V, RDS(on) = 4.0Ω @VGS = -10 V Low gate charge ( typical 6.5 nC) Low Crss ( typical 6.5 pF) Fast switching 100% avalanche tested Improved dv/dt capability D S ! G! G S D2-PAK FQB Series G D S I2-PAK FQI Series !

FQB2P25_FairchildSemiconductor.pdf