FQD5P10 Datasheet (Fairchild Semiconductor)

FQD5P10, 100V P-Channel MOSFET

This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology.

This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy

FQD5P10 Features

* -3.6 A, -100 V, RDS(on) = 1.05 (Max.)@ VGS = -10 V, ID = 1.8 A

* Low Gate Charge (Typ. 6.3 nC)

* Low Crss (Typ. 18 pF)

* 100% avalanche tested D G G S D-PAK Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt P