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FQD8P10TM_F085

100V P-Channel MOSFET

FQD8P10TM_F085 Features

* -6.6A, -100V, RDS(on) = 0.53Ω @VGS = -10 V

* Low gate charge ( typical 12 nC)

* Low Crss ( typical 30 pF)

* Fast switching

* 100% avalanche tested

* Improved dv/dt capability

* Qualified to AEC Q101

* RoHS Compliant D D D-PAK GS Ab

FQD8P10TM_F085 General Description

These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse i.

FQD8P10TM_F085 Datasheet (623.65 KB)

Preview of FQD8P10TM_F085 PDF

Datasheet Details

Part number:

FQD8P10TM_F085

Manufacturer:

Fairchild Semiconductor

File Size:

623.65 KB

Description:

100v p-channel mosfet.

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TAGS

FQD8P10TM_F085 100V P-Channel MOSFET Fairchild Semiconductor

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