FQD8P10TM-F085

P-Channel MOSFET

ON Semiconductor

FQD8P10TM-F085 Features

* -6.6A, -100V, RDS(on) = 0.53Ω @VGS = -10 V

* Low gate charge ( typical 12 nC)

* Low Crss ( typical 30 pF)

* Fast switching

* 100% avalanche tested

* Improved dv/dt capability

* Qualified to AEC Q101

* RoHS Compliant D D-PAK GS Absol

FQD8P10TM-F085 General Description

These P-Channel enhancement mode power field effect transistors are produced using ON Semiconductor’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy .

FQD8P10TM-F085 Datasheet (709.73 KB)