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FQI28N15

150V N-Channel MOSFET

FQI28N15 Features

* 28A, 150V, RDS(on) = 0.09Ω @VGS = 10 V Low gate charge ( typical 40 nC) Low Crss ( typical 50 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating D ! " G S G! ! " " "

FQI28N15 General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the .

FQI28N15 Datasheet (627.82 KB)

Preview of FQI28N15 PDF

Datasheet Details

Part number:

FQI28N15

Manufacturer:

Fairchild Semiconductor

File Size:

627.82 KB

Description:

150v n-channel mosfet.

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FQI28N15 150V N-Channel MOSFET Fairchild Semiconductor

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