FQI28N15 150V N-Channel MOSFET

Fairchild Semiconductor

Description

FQB28N15 / FQI28N15 December 2000 QFET FQB28N15 / FQI28N15 150V N-Channel MOSFET General .
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

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Datasheet Specifications

Part number: FQI28N15
Manufacturer: Fairchild Semiconductor
File Size: 627.82 KB
Datasheet: FQI28N15_FairchildSemiconductor.pdf
Description: 150V N-Channel MOSFET

Features

* 28A, 150V, RDS(on) = 0.09Ω @VGS = 10 V Low gate charge ( typical 40 nC) Low Crss ( typical 50 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating D ! " G S G! ! " " "

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FQI28N15 150V N-Channel MOSFET Fairchild Semiconductor

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