FQI20N06L Datasheet - Fairchild Semiconductor

FQI20N06L 60V LOGIC N-Channel MOSFET

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse i.

FQI20N06L Features

* 21A, 60V, RDS(on) = 0.055Ω @VGS = 10 V Low gate charge ( typical 9.5 nC) Low Crss ( typical 35 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating D ! " G S G! ! " " "

FQI20N06L_FairchildSemiconductor.pdf