Part number:
FQI27P06
Manufacturer:
Fairchild Semiconductor
File Size:
700.35 KB
Description:
60v p-channel mosfet.
FQI27P06_FairchildSemiconductor.pdf
Datasheet Details
These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand a high energy pulse
FQI27P06 Features
* -27A, -60V, RDS(on) = 0.07Ω @VGS = -10 V Low gate charge ( typical 33 nC) Low Crss ( typical 120 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating D G! G S !
FQI27P06_FairchildSemiconductor.pdf
Datasheet Details
FQI27P06
Fairchild Semiconductor
700.35 KB
60v p-channel mosfet.
📁 Related Datasheet
📌 All Tags