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FQI27P06 Datasheet - Fairchild Semiconductor

FQI27P06 60V P-Channel MOSFET

These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand a high energy pulse.

FQI27P06 Features

* -27A, -60V, RDS(on) = 0.07Ω @VGS = -10 V Low gate charge ( typical 33 nC) Low Crss ( typical 120 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating D G! G S !

FQI27P06 Datasheet (700.35 KB)

Preview of FQI27P06 PDF

Datasheet Details

Part number:

FQI27P06

Manufacturer:

Fairchild Semiconductor

File Size:

700.35 KB

Description:

60v p-channel mosfet.

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FQI27P06 60V P-Channel MOSFET Fairchild Semiconductor

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