Datasheet4U Logo Datasheet4U.com

FQI22P10 - 100V P-Channel MOSFET

FQI22P10 Description

FQB22P10 / FQI22P10 QFET FQB22P10 / FQI22P10 100V P-Channel MOSFET General .
These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

FQI22P10 Features

* -22A, -100V, RDS(on) = 0.125Ω @VGS = -10 V Low gate charge ( typical 40 nC) Low Crss ( typical 160 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating D D G G S D2-PAK F

📥 Download Datasheet

Preview of FQI22P10 PDF
datasheet Preview Page 2 datasheet Preview Page 3

📁 Related Datasheet

  • FQI27N25TU-F085 - N-Channel MOSFET (ON Semiconductor)
  • FQI1N60 - 1.3A N-Channel MOSFET (OuCan)
  • FQI4N60 - 600V 4A N-Channel MOSFET (Oucan Semi)
  • FQI4N65 - 4A N-Channel MOSFET (Oucan Semi)
  • FQI5N60C - N-Channel MOSFET (ON Semiconductor)
  • FQI7N60 - N-Channel MOSFET (ON Semiconductor)
  • FQI8N60C - N-Channel MOSFET (ON Semiconductor)

📌 All Tags

100V P-Channel MOSFET Fairchild Semiconductor
Fairchild Semiconductor FQI22P10-like datasheet

FQI22P10 Stock/Price