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FQI24N08 - 80V N-Channel MOSFET

FQI24N08 Description

FQB24N08 / FQI24N08 August 2000 QFET FQB24N08 / FQI24N08 80V N-Channel MOSFET General .
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

FQI24N08 Features

* 24A, 80V, RDS(on) = 0.06Ω @VGS = 10 V Low gate charge ( typical 19 nC) Low Crss ( typical 50 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating D ! " G S G! ! " " " D

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80V N-Channel MOSFET Fairchild Semiconductor
Fairchild Semiconductor FQI24N08-like datasheet

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