FQI27N25 250V N-Channel MOSFET

Fairchild Semiconductor

Description

FQI27N25 * N-Channel QFET® MOSFET FQI27N25 N-Channel QFET® MOSFET 250 V, 25.5 A, 110 mΩ November 2013 .
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology.

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Datasheet Specifications

Part number: FQI27N25
Manufacturer: Fairchild Semiconductor
File Size: 875.99 KB
Datasheet: FQI27N25_FairchildSemiconductor.pdf
Description: 250V N-Channel MOSFET

Features

* 25.5 A, 250 V, RDS(on) = 110 mΩ (Max. ) @ VGS = 10 V, ID = 12.75 A
* Low Gate Charge (Typ. 50 nC)
* Low Crss (Typ. 45 pF)
* 100% Avalanche Tested D GDS I2-PAK G S Absolute Maximum Ratings TC = 25°C unless otherwise noted.
* 4 4
* : 4

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FQI27N25 250V N-Channel MOSFET Fairchild Semiconductor

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