FQI27N25 Datasheet - Fairchild Semiconductor

FQI27N25 250V N-Channel MOSFET

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy .

FQI27N25 Features

* 25.5 A, 250 V, RDS(on) = 110 mΩ (Max.) @ VGS = 10 V, ID = 12.75 A

* Low Gate Charge (Typ. 50 nC)

* Low Crss (Typ. 45 pF)

* 100% Avalanche Tested D GDS I2-PAK G S Absolute Maximum Ratings TC = 25°C unless otherwise noted.

* 4 4

* : 4

FQI27N25_FairchildSemiconductor.pdf