Part number:
FQI27N25
Manufacturer:
Fairchild Semiconductor
File Size:
875.99 KB
Description:
250v n-channel mosfet.
FQI27N25_FairchildSemiconductor.pdf
Datasheet Details
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology.
This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy
FQI27N25 Features
* 25.5 A, 250 V, RDS(on) = 110 mΩ (Max.) @ VGS = 10 V, ID = 12.75 A
* Low Gate Charge (Typ. 50 nC)
* Low Crss (Typ. 45 pF)
* 100% Avalanche Tested D GDS I2-PAK G S Absolute Maximum Ratings TC = 25°C unless otherwise noted.
* 4 4
* : 4
FQI27N25_FairchildSemiconductor.pdf
Datasheet Details
FQI27N25
Fairchild Semiconductor
875.99 KB
250v n-channel mosfet.
📁 Related Datasheet
📌 All Tags