Datasheet4U Logo Datasheet4U.com

FQI27N25 - 250V N-Channel MOSFET

FQI27N25 Description

FQI27N25 * N-Channel QFET® MOSFET FQI27N25 N-Channel QFET® MOSFET 250 V, 25.5 A, 110 mΩ November 2013 .
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology.

FQI27N25 Features

* 25.5 A, 250 V, RDS(on) = 110 mΩ (Max. ) @ VGS = 10 V, ID = 12.75 A
* Low Gate Charge (Typ. 50 nC)
* Low Crss (Typ. 45 pF)
* 100% Avalanche Tested D GDS I2-PAK G S Absolute Maximum Ratings TC = 25°C unless otherwise noted. 
*  4 4
*  : 4

📥 Download Datasheet

Preview of FQI27N25 PDF
datasheet Preview Page 2 datasheet Preview Page 3

📁 Related Datasheet

  • FQI27N25TU-F085 - N-Channel MOSFET (ON Semiconductor)
  • FQI1N60 - 1.3A N-Channel MOSFET (OuCan)
  • FQI4N60 - 600V 4A N-Channel MOSFET (Oucan Semi)
  • FQI4N65 - 4A N-Channel MOSFET (Oucan Semi)
  • FQI5N60C - N-Channel MOSFET (ON Semiconductor)
  • FQI7N60 - N-Channel MOSFET (ON Semiconductor)
  • FQI8N60C - N-Channel MOSFET (ON Semiconductor)

📌 All Tags

250V N-Channel MOSFET Fairchild Semiconductor
Fairchild Semiconductor FQI27N25-like datasheet

FQI27N25 Stock/Price