FQI5P10 Datasheet (Fairchild Semiconductor)

FQI5P10, 100V P-Channel MOSFET

These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse i

FQI5P10 Features

* -4.5A, -100V, RDS(on) = 1.05Ω @VGS = -10 V Low gate charge ( typical 6.3 nC) Low Crss ( typical 18 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating D D G G S D2-PAK F