FQP33N10 - 100V N-Channel MOSFET

Fairchild Semiconductor

Datasheet Details

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology.

33 A, 100 V, RDS(on) = 52 mΩ (Max. ) @ VGS = 10 V, ID = 16.5 A.
Low Gate Charge (Typ. 38 nC).
Low Crss (Typ. 62 pF).
100% Avalanche Tested.
175°C Maximum Junction Temperature Rating D GDS TO-220 G Absolute Maximum Ratings TC = 25°C unless otherwise noted. Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) Drain Current - Pulsed Gate-Source.

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