IRFU320, IRFR320 Datasheet - Fairchild Semiconductor

IRFU320 N-Channel Power MOSFETs

IRFR320, IRFU320 Data Sheet July 1999 File Number 2412.3 3.1A, 400V, 1.800 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power ﬁeld effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a speciﬁed level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high pow.

IRFU320 Features

* 3.1A, 400V

* rDS(ON) = 1.800Ω

* Single Pulse Avalanche Energy Rated

* SOA is Power Dissipation Limited

* Nanosecond Switching Speeds

* Linear Transfer Characteristics

* High Input Impedance

* Related Literature - TB334 “Guidelines for

IRFR320-FairchildSemiconductor.pdf

IRFU320 Datasheet Preview — This datasheet PDF includes multiple part numbers: IRFU320, IRFR320. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

IRFU320, IRFR320

Manufacturer:

Fairchild Semiconductor

File Size:

83.46 KB

Description:

N-channel power mosfets.

Note:

This datasheet PDF includes multiple part numbers: IRFU320, IRFR320.
Please refer to the document for exact specifications by model.

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IRFU320 IRFR320 N-Channel Power MOSFETs Fairchild Semiconductor

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