IRFU310 MOSFET Datasheet - International Rectifier

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IRFU310 - Power MOSFET (Vishay Siliconix)
.vishay. IRFR310, IRFU310, SiHFR310, SiHFU310 Vishay Siliconix Power MOSFET DPAK (TO-252) D IPAK (TO-251) D D G GS GD S S N-Channel MOSF.

IRFU310 - N-Channel MOSFET (INCHANGE)
iscN-Channel MOSFET Transistor IRFU310 ·FEATURES ·Low drain-source on-resistance: RDS(ON) ≤3.6Ω @VGS=10V ·Enhancement mode: Vth = 2.0 to 4.0V (VDS =.

IRFU310A - Power MOSFET (Fairchild Semiconductor)
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IRFU310B - 400V N-Channel MOSFET (Fairchild Semiconductor)
IRFR310B / IRFU310B November 2001 IRFR310B / IRFU310B 400V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect .

IRFU320 - Power MOSFET (International Rectifier)
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IRFU320 - N-Channel Power MOSFETs (Intersil Corporation)
IRFR320, IRFU320 Data Sheet July 1999 File Number 2412.3 3.1A, 400V, 1.800 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon .

IRFU320 - Power MOSFET (Vishay Siliconix)
.vishay. IRFR320, IRFU320, SiHFR320, SiHFU320 Vishay Siliconix Power MOSFET DPAK (TO-252) D IPAK (TO-251) D D G GS GD S S N-Channel MOSF.

IRFU320 - N-Channel Power MOSFETs (Fairchild Semiconductor)
IRFR320, IRFU320 Data Sheet July 1999 File Number 2412.3 3.1A, 400V, 1.800 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon .

IRFU320 - N-Channel MOSFET (INCHANGE)
iscN-Channel MOSFET Transistor IRFU320 ·FEATURES ·Low drain-source on-resistance: RDS(ON) ≤1.8Ω @VGS=10V ·Enhancement mode: Vth = 2.0 to 4.0V (VDS =.

IRFU320A - Power MOSFET (Samsung)
)($785(6 Qýýý$YDODQFKHýý5XJJHGýý7HFKQRORJ\ Qýýý5XJJHGýý*DWHýý2[LGHýý7HFKQRORJ\ý Qýýý/RZHUýý,QSXWýý&DSDFLWDQFH Qýý.

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