Datasheet4U Logo Datasheet4U.com

IRFU320B

400V N-Channel MOSFET

IRFU320B Features

* 3.1A, 400V, RDS(on) = 1.75Ω @VGS = 10 V Low gate charge ( typical 14 nC) Low Crss ( typical 11 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D !

* ◀ ▲

* G S D-PAK IRFR Series I-PAK G D S IRFU Ser

IRFU320B General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the a.

IRFU320B Datasheet (672.47 KB)

Preview of IRFU320B PDF

Datasheet Details

Part number:

IRFU320B

Manufacturer:

Fairchild Semiconductor

File Size:

672.47 KB

Description:

400v n-channel mosfet.

📁 Related Datasheet

IRFU320 Power MOSFET (International Rectifier)

IRFU320 N-Channel Power MOSFETs (Intersil Corporation)

IRFU320 Power MOSFET (Vishay Siliconix)

IRFU320 N-Channel Power MOSFETs (Fairchild Semiconductor)

IRFU320 N-Channel MOSFET (INCHANGE)

IRFU320A Power MOSFET (Samsung)

IRFU310 Power MOSFET (International Rectifier)

IRFU310 Power MOSFET (Vishay Siliconix)

IRFU310 N-Channel MOSFET (INCHANGE)

IRFU310A Power MOSFET (Fairchild Semiconductor)

TAGS

IRFU320B 400V N-Channel MOSFET Fairchild Semiconductor

Image Gallery

IRFU320B Datasheet Preview Page 2 IRFU320B Datasheet Preview Page 3

IRFU320B Distributor