IRFU310B
Fairchild Semiconductor
647.40kb
400v n-channel mosfet. These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology.
TAGS
📁 Related Datasheet
IRFU310 - Power MOSFET
(International Rectifier)
.
IRFU310 - Power MOSFET
(Vishay Siliconix)
.vishay.
IRFR310, IRFU310, SiHFR310, SiHFU310
Vishay Siliconix
Power MOSFET
DPAK (TO-252)
D
IPAK (TO-251)
D
D G
GS
GD S
S N-Channel MOSF.
IRFU310 - N-Channel MOSFET
(INCHANGE)
iscN-Channel MOSFET Transistor
IRFU310
·FEATURES ·Low drain-source on-resistance:
RDS(ON) ≤3.6Ω @VGS=10V ·Enhancement mode:
Vth = 2.0 to 4.0V (VDS =.
IRFU310A - Power MOSFET
(Fairchild Semiconductor)
..
$GYDQFHG 3RZHU 026)(7
FEATURES
♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved .
IRFU320 - Power MOSFET
(International Rectifier)
.
IRFU320 - N-Channel Power MOSFETs
(Intersil Corporation)
IRFR320, IRFU320
Data Sheet July 1999 File Number
2412.3
3.1A, 400V, 1.800 Ohm, N-Channel Power MOSFETs
These are N-Channel enhancement mode silicon .
IRFU320 - Power MOSFET
(Vishay Siliconix)
.vishay.
IRFR320, IRFU320, SiHFR320, SiHFU320
Vishay Siliconix
Power MOSFET
DPAK (TO-252)
D
IPAK (TO-251)
D
D G
GS
GD S
S N-Channel MOSF.
IRFU320 - N-Channel Power MOSFETs
(Fairchild Semiconductor)
IRFR320, IRFU320
Data Sheet July 1999 File Number 2412.3
3.1A, 400V, 1.800 Ohm, N-Channel Power MOSFETs
These are N-Channel enhancement mode silicon .
IRFU320 - N-Channel MOSFET
(INCHANGE)
iscN-Channel MOSFET Transistor
IRFU320
·FEATURES ·Low drain-source on-resistance:
RDS(ON) ≤1.8Ω @VGS=10V ·Enhancement mode:
Vth = 2.0 to 4.0V (VDS =.
IRFU320A - Power MOSFET
(Samsung)
)($785(6
Qýýý$YDODQFKHýý5XJJHGýý7HFKQRORJ\ Qýýý5XJJHGýý*DWHýý2[LGHýý7HFKQRORJ\ý Qýýý/RZHUýý,QSXWýý&DSDFLWDQFH Qýý.