IRFU3303 - HEXFET Power MOSFET
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer .
IRFU3303 Features
* 5) 0.64 (.025) 0.25 ( .010) M A M B NOT ES:
0.58 (.023) 0.46 (.018)
2.28 (.090) 4.57 (.180)
1 DIME NSIO NING & T OLE RANCING P ER A NSI Y 14.5M, 1982. 2 CO NTRO LLING DIMENS ION : INCH. 3 CO NFO RMS T O JEDE C O UTLINE TO -252AA . 4 DIME NSIO NS S HO W N ARE BEF O RE SO LD ER DIP , SO LDER DIP MA