Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer
IRFR3303PBF_InternationalRectifier.pdf
Datasheet Details
IRFU3303PBF, IRFR3303PBF
International Rectifier
273.27 KB
Hexfet power mosfet.
This datasheet PDF includes multiple part numbers: IRFU3303PBF, IRFR3303PBF.
Please refer to the document for exact specifications by model.
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