These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the a
IRFU330B Features
* 4.5A, 400V, RDS(on) = 1.0Ω @VGS = 10 V Low gate charge ( typical 25 nC) Low Crss ( typical 20 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D !
* ◀ ▲
* G! G S D-PAK IRFR Series I-PAK G D S IRFU Ser
IRFR330B_FairchildSemiconductor.pdf
Datasheet Details
IRFU330B, IRFR330B
Fairchild Semiconductor
671.72 KB
400v n-channel mosfet.
This datasheet PDF includes multiple part numbers: IRFU330B, IRFR330B.
Please refer to the document for exact specifications by model.
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