IRFW550A Datasheet, Mosfet, Fairchild Semiconductor

IRFW550A Features

• Mosfet Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area 175 C Operating Temperature Lower Leakage Current : 10

PDF File Details

Part number:

IRFW550A

Manufacturer:

Fairchild Semiconductor

File Size:

292.98kb

Download:

📄 Datasheet

Description:

(irfi550a / irfw550a) advanced power mosfet.

TAGS

IRFW550A

Fairchild Semiconductor

📁 Related Datasheet

IRFW520A - Advanced Power MOSFET (Fairchild Semiconductor)
Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology .. IRFW/I520A BVDSS = 100 V RDS(on) = 0.2 Ω .

IRFW530A - Advanced Power MOSFET (Fairchild Semiconductor)
Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology .. IRFW/I530A BVDSS = 100 V RDS(on) = 0.11 Ω.

IRFW540A - Advanced Power MOSFET (Fairchild Semiconductor)
Advanced Power MOSFET FEATURES n Avalanche Rugged Technology n Rugged Gate Oxide Technology n Lower Input Capacitance n Improved Gate Charge n Extende.

IRFW450 - N-Channel MOSFET Transistor (Inchange Semiconductor)
INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRFW450 FEATURES ·Drain Current –ID= 14A@ TC=25℃ ·Drain Source Volt.

IRFW610A - Power MOSFET (Samsung)

     

 )($785(6 Qýýý$YDODQFKHýý5XJJHGýý7HFKQRORJ\ Qýýý5XJJHGýý*DWHýý2[LGHýý7HFKQRORJ\ý Qýýý/RZHUýý,QSXWýý&DSDFLWDQFH Qýý.

IRFW610B - N-Channel MOSFET (Fairchild Semiconductor)
IRFW610B / IRFI610B November 2001 IRFW610B / IRFI610B 200V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect .

IRFW614A - Power MOSFET (Fairchild Semiconductor)
$GYDQFHG 3RZHU 026)(7 IRFW/I614A FEATURES ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Cha.

IRFW614B - N-Channel MOSFET (Fairchild Semiconductor)
IRFW614B / IRFI614B November 2001 IRFW614B / IRFI614B 250V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect .

IRFW620A - Power MOSFET (Fairchild Semiconductor)
Advanced Power MOSFET IRFW/I620A FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Exte.

IRFW620B - N-Channel MOSFET (Fairchild Semiconductor)
IRFW620B / IRFI620B November 2001 IRFW620B / IRFI620B 200V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect .