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IRLW510A ADVANCED POWER MOSFET

IRLW510A Description

$GYDQFHG 3RZHU 026)(7 .

IRLW510A Features

* Avalanche Rugged Technology
* Rugged Gate Oxide Technology
* Lower Input Capacitance
* Improved Gate Charge
* Extended Safe Operating Area
* 175° C Operating Temperature
* Lower Leakage Current: 10µA (Max. ) @ VDS = 100V
* Lower RDS(ON

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ADVANCED POWER MOSFET Fairchild Semiconductor
Fairchild Semiconductor IRLW510A-like datasheet