IRLW620A - Power MOSFET

Fairchild Semiconductor

Datasheet Details

Part number	IRLW620A
Manufacturer	Fairchild Semiconductor
File Size	220.86 KB
Description	Power MOSFET
Datasheet	IRLW620A-FairchildSemiconductor.pdf

Avalanche Rugged Technology.
Rugged Gate Oxide Technology.
Lower Input Capacitance.
Improved Gate Charge.
Extended Safe Operating Area.
150°C Operating Temperature.
Lower Leakage Current: 10µA (Max. ) @ VDS = 200V.
Lower RDS(ON): 0.609Ω (Typ. ) Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25°C) Continuous Drain Curre.

📁 IRLW620A Similar Datasheet

Other Datasheets by Fairchild Semiconductor

Published: Aug 4, 2016 |