IRLW630A - ADVANCED POWER MOSFET

Fairchild Semiconductor

Datasheet Details

Part number	IRLW630A
Manufacturer	Fairchild Semiconductor
File Size	225.02 KB
Description	ADVANCED POWER MOSFET
Datasheet	IRLW630A_FairchildSemiconductor.pdf

Avalanche Rugged Technology.
Rugged Gate Oxide Technology.
Lower Input Capacitance.
Improved Gate Charge.
Extended Safe Operating Area.
150° C Operating Temperature.
Lower Leakage Current: 10µA (Max. ) @ VDS = 200V.
Lower RDS(ON): 0.335Ω (Typ. ) IRLW/I630A BVDSS = 200 V RDS(on) = 0.4Ω ID = 9 A D2-PAK 2 I2-PAK 1 1 3 2 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD Charact.

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Published: Apr 16, 2005 |