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IRLW640A Power MOSFET

IRLW640A Description

$GYDQFHG 3RZHU 026)(7 IRLW/I640A .

IRLW640A Features

* Avalanche Rugged Technology
* Rugged Gate Oxide Technology
* Lower Input Capacitance
* Improved Gate Charge
* Extended Safe Operating Area
* 150°C Operating Temperature
* Lower Leakage Current: 10µA (Max. ) @ VDS = 200V
* Lower RDS(ON)

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Power MOSFET Fairchild Semiconductor
Fairchild Semiconductor IRLW640A-like datasheet