RF1S630SM Datasheet - Fairchild Semiconductor

RF1S630SM N-Channel Power MOSFETs

Data Sheet IRF630, RF1S630SM January 2002 9A, 200V, 0.400 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar swi.

RF1S630SM Features

* 9A, 200V

* rDS(ON) = 0.400Ω

* Single Pulse Avalanche Energy Rated

* SOA is Power Dissipation Limited

* Nanosecond Switching Speeds

* Linear Transfer Characteristics

* High Input Impedance

* Related Literature - TB334 “Guidelines for

RF1S630SM Datasheet (127.15 KB)

RF1S630SM Datasheet Preview — Preview of RF1S630SM PDF

Datasheet Details

Part number:

RF1S630SM

Manufacturer:

Fairchild Semiconductor

File Size:

127.15 KB

Description:

N-channel power mosfets.

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RF1S630SM N-Channel Power MOSFETs Fairchild Semiconductor

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