* 18A, 200V
* rDS(ON) = 0.180Ω
* Single Pulse Avalanche Energy Rated
* SOA is Power Dissipation Limited
* Nanosecond Switching Speed
* Linear Transfer Characteristics
* High Input Impedance
* Related Literature - TB334 “Guidelines for S
RF1S640
Fairchild Semiconductor
132.20 KB
18a/ 200v/ 0.180 ohm/ n-channel power mosfets.
IRF640, RF1S640, RF1S640SM
Data Sheet January 2002
18A, 200V, 0.180 Ohm, N-Channel Power MOSFETs
These are N-Channel enhancement mode silicon gate po.
📁 Related Datasheet
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