* 9A, 200V
* rDS(ON) = 0.400Ω
* Single Pulse Avalanche Energy Rated
* SOA is Power Dissipation Limited
* Nanosecond Switching Speeds
* Linear Transfer Characteristics
* High Input Impedance
* Related Literature - TB334 “Guidelines for S
RF1S630SM Datasheet (62.35 KB)
RF1S630SM
Intersil Corporation
62.35 KB
9a/ 200v/ 0.400 ohm/ n-channel power mosfets.
IRF630, RF1S630SM
Data Sheet June 1999 File Number
1578.2
9A, 200V, 0.400 Ohm, N-Channel Power MOSFETs
These are N-Channel enhancement mode silicon g.
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