RF1S630SM Datasheet - Intersil Corporation

RF1S630SM 9A/ 200V/ 0.400 Ohm/ N-Channel Power MOSFETs

IRF630, RF1S630SM Data Sheet June 1999 File Number 1578.2 9A, 200V, 0.400 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power ﬁeld effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a speciﬁed level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high powe.

RF1S630SM Features

* 9A, 200V

* rDS(ON) = 0.400Ω

* Single Pulse Avalanche Energy Rated

* SOA is Power Dissipation Limited

* Nanosecond Switching Speeds

* Linear Transfer Characteristics

* High Input Impedance

* Related Literature - TB334 “Guidelines for S

RF1S630SM Datasheet (62.35 KB)

RF1S630SM Datasheet Preview — Preview of RF1S630SM PDF

Datasheet Details

Part number:

RF1S630SM

Manufacturer:

Intersil Corporation

File Size:

62.35 KB

Description:

9a/ 200v/ 0.400 ohm/ n-channel power mosfets.

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RF1S630SM 200V 0.400 Ohm N-Channel Power MOSFETs Intersil Corporation

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