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RF1S630SM 9A/ 200V/ 0.400 Ohm/ N-Channel Power MOSFETs

RF1S630SM Description

IRF630, RF1S630SM Data Sheet June 1999 File Number 1578.2 9A, 200V, 0.400 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon g.

RF1S630SM Features

* 9A, 200V
* rDS(ON) = 0.400Ω
* Single Pulse Avalanche Energy Rated
* SOA is Power Dissipation Limited
* Nanosecond Switching Speeds
* Linear Transfer Characteristics
* High Input Impedance
* Related Literature - TB334 “Guidelines for S

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Datasheet Details

Part number
RF1S630SM
Manufacturer
Intersil Corporation
File Size
62.35 KB
Datasheet
RF1S630SM_IntersilCorporation.pdf
Description
9A/ 200V/ 0.400 Ohm/ N-Channel Power MOSFETs

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200V 0.400 Ohm N-Channel Power MOSFETs Intersil Corporation
Intersil Corporation RF1S630SM-like datasheet