RF1S640SM Datasheet - Fairchild Semiconductor

RF1S640SM 18A/ 200V/ 0.180 Ohm/ N-Channel Power MOSFETs

IRF640, RF1S640, RF1S640SM Data Sheet January 2002 18A, 200V, 0.180 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bi.

RF1S640SM Features

* 18A, 200V

* rDS(ON) = 0.180Ω

* Single Pulse Avalanche Energy Rated

* SOA is Power Dissipation Limited

* Nanosecond Switching Speed

* Linear Transfer Characteristics

* High Input Impedance

* Related Literature - TB334 “Guidelines for S

RF1S640SM Datasheet (132.20 KB)

RF1S640SM Datasheet Preview — Preview of RF1S640SM PDF

Datasheet Details

Part number:

RF1S640SM

Manufacturer:

Fairchild Semiconductor

File Size:

132.20 KB

Description:

18a/ 200v/ 0.180 ohm/ n-channel power mosfets.

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RF1S640SM 18A 200V 0.180 Ohm N-Channel Power MOSFETs Fairchild Semiconductor

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