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SSP70N10A Advanced Power MOSFET

SSP70N10A Description

Advanced Power MOSFET .

SSP70N10A Features

* Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µA (Max. ) @ VDS = 100V Lower RDS(ON) : 0.018 Ω (Typ. ) SSP70N10A BVDSS = 100 V RDS(on) = 0.023 Ω ID = 55 A TO-220 1 2 3 1.Gate 2. Drain 3. S

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Advanced Power MOSFET Fairchild Semiconductor
Fairchild Semiconductor SSP70N10A-like datasheet