FDMC8884 N-Channel Power Trench MOSFET

Fairchild

Description

FDMC8884 N-Channel Power Trench® MOSFET April 2012 FDMC8884 N-Channel Power Trench® MOSFET 30 V, 15 A, 19 mΩ .
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-.

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Datasheet Specifications

Part number: FDMC8884
Manufacturer: Fairchild
File Size: 341.70 KB
Datasheet: FDMC8884-Fairchild.pdf
Description: N-Channel Power Trench MOSFET

Features

* Max rDS(on) = 19 mΩ at VGS = 10 V, ID = 9.0 A
* Max rDS(on) = 30 mΩ at VGS = 4.5 V, ID = 7.2 A
* High performance technology for extremely low rDS(on)

Applications

* common in Notebook Computers and Portable Battery Packs. Application
* High side in DC - DC Buck Converters
* Notebook battery power management
* Load switch in Notebook Top Pin 1 S S S G Bottom D D D D D 5 6 7 8 4 3 2 1 G S S S D D D MLP 3.3x3.3 MOSFET Maximum Ra

FDMC8884 Distributors

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FDMC8884 N-Channel Power Trench MOSFET Fairchild

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