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FDMC8882 - MOSFET

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FDMC8882 Product details

Description

Max rDS(on) = 14.3 m: at VGS = 10 V, ID = 10.5 A Max rDS(on) = 22.5 m: at VGS = 4.5 V, ID = 8.3 A High performance technology for extremely low rDS(on) Termination is Lead-free and RoHS Compliant This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance.This device is well suited for Power Management and load switching applications common in Note

Features

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