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FDMC8854 - N-Channel Power Trench MOSFET

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FDMC8854 Product details

Description

Max rDS(on) = 5.7mΩ at VGS = 10V, ID = 15A Max rDS(on) = 7.6mΩ at VGS = 4.5V, ID = 13A Low Profile - 1mm max in Power 33 RoHS Compliant tm This N-Channel MOSFET is a rugged gate version of Fairchild Semiconductor‘s advanced Power Trench process.It has been optimized for power management applications.Application DC - DC Conversion Bottom Top 5 6 7 8 D D D D 5 6 4 3 2 1 www.DataSheet4U.com 7 4 3 2 1 S S S G 8 Power 33 MOSFET Maxi

Features

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