FDMC8854 - N-Channel Power Trench MOSFET
* Max rDS(on) = 5.7mΩ at VGS = 10V, ID = 15A * Max rDS(on) = 7.6mΩ at VGS = 4.5V, ID = 13A * Low Profile - 1mm max in Power 33 * RoHS Compliant tm This N-Channel MOSFET is a rugged gate version of Fairchild Semiconductor‘s advanced Power Trench process.
It has been
