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MJE3055T NPN Silicon Transistor

MJE3055T Description

MJE3055T MJE3055T General Purpose and Switching Applications * DC Current Gain Specified to IC =10A * High Current Gain-Bandwidth Pro.

MJE3055T Applications

* DC Current Gain Specified to IC =10A
* High Current Gain-Bandwidth Product : fT = 2MHz (Min. ) 1 TO-220 2.Collector 3.Emitter 1.Base NPN Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC IB PC PC TJ TSTG Parameter Collector -Base

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