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MJE350 PNP Epitaxial Silicon Transistor

MJE350 Description

MJE350 MJE350 High Voltage General Purpose Applications * High Collector-Emitter Breakdown Voltage * Suitable for Transformer

MJE350 Applications

* High Collector-Emitter Breakdown Voltage
* Suitable for Transformer
* Complement to MJE340 1 TO-126 2.Collector 3.Base 1. Emitter . . PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC PC TJ TSTG Parameter Col

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