MJE350 Datasheet (Fairchild) - PNP Epitaxial Silicon Transistor

MJE350, PNP Epitaxial Silicon Transistor

MJE350 MJE350 High Voltage General Purpose Applications High Collector-Emitter Breakdown Voltage Suitable for Transformer Complement to MJE340 1 TO-126 2.Collector 3.Base 1.

Emitter ..PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation (TC=25°C) Junction Temperature Stora