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NDP5060

N-Channel Enhancement Mode Field Effect Transistor

NDP5060 Features

* 26 A, 60 V. RDS(ON) = 0.05 Ω @ VGS= 10 V. Critical DC electrical parameters specified at elevated temperature. Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor. 175°C maximum junction temperature rating. High density cell design for extremel

NDP5060 General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high ener.

NDP5060 Datasheet (356.82 KB)

Preview of NDP5060 PDF

Datasheet Details

Part number:

NDP5060

Manufacturer:

Fairchild

File Size:

356.82 KB

Description:

N-channel enhancement mode field effect transistor.

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NDP5060 N-Channel Enhancement Mode Field Effect Transistor Fairchild

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