NDP508AE - N-Channel Enhancement Mode Field Effect Transistor

Fairchild

Datasheet Details

These N-channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.

19 and 17A, 80V. RDS(ON) = 0.08 and 0.10Ω. Critical DC electrical parameters specified at elevated temperature. Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor. 175°C maximum junction temperature rating. High density cell design (3 million/in²) for extremely low RDS(ON). TO-220 and TO-263 (D2PAK) package for both through hole and surface mount.

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Fairchild NDP508AE-like datasheet

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