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NDP508AE

N-Channel Enhancement Mode Field Effect Transistor

NDP508AE Features

* 19 and 17A, 80V. RDS(ON) = 0.08 and 0.10Ω. Critical DC electrical parameters specified at elevated temperature. Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor. 175°C maximum junction temperature rating. High density cell design (3 million/i

NDP508AE General Description

These N-channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high ener.

NDP508AE Datasheet (73.44 KB)

Preview of NDP508AE PDF

Datasheet Details

Part number:

NDP508AE

Manufacturer:

Fairchild

File Size:

73.44 KB

Description:

N-channel enhancement mode field effect transistor.
May 1994 NDP508A / NDP508AE / NDP508B / NDP508BE NDB508A / NDB508AE / NDB508B / NDB508BE N-Channel Enhancement Mode Field Effect Transistor General D.

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NDP508AE N-Channel Enhancement Mode Field Effect Transistor Fairchild

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