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FDD6N20 MOSFET

FDD6N20 Description

FDD6N20 / FDU6N20 N-Channel MOSFET FDD6N20 / FDU6N20 N-Channel MOSFET 200V, 4.5A, 0.8Ω .
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

FDD6N20 Features

* RDS(on) = 0.6Ω ( Typ. )@ VGS = 10V, ID = 2.3A
* Low gate charge ( Typ. 4.7nC )
* Low Crss ( Typ. 6.3pF )
* Fast switching
* 100% avalanche tested
* Improved dv/dt capability

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MOSFET Fairchild Semiconductor
Fairchild Semiconductor FDD6N20-like datasheet