FDG329N - 20V N-Channel PowerTrench MOSFET

Fairchild Semiconductor

FDG329N Datasheet Preview — Preview of FDG329N PDF

Datasheet Details

Part number	FDG329N
Manufacturer	Fairchild ↗ Semiconductor
File Size	79.85 KB
Description	20V N-Channel PowerTrench MOSFET
Datasheet	FDG329N_FairchildSemiconductor.pdf

FDG329N Product details

Description

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.

Features

1.5 A, 20 V. RDS(ON) = 90 mΩ @ VGS = 4.5 V. RDS(ON) = 115 mΩ @ VGS = 2.5 V.
Fast switching speed.
Low gate charge (3.3 nC typical).
High performance trench technology for extremely low RDS(ON).
High power and current handling capability.

📁 FDG329N Similar Datasheet

FDG313N - N-Channel Digital FET (ON Semiconductor)
FDG315N - N-Channel MOSFET (ON Semiconductor)
FDG316P - P-Channel MOSFET (ON Semiconductor)
FDG03 - Photodiodes (Thorlabs)
FDG05 - Photodiodes (Thorlabs)
FDG1024NZ - Dual N-Channel MOSFET (ON Semiconductor)
FDG122032A - Monochrome LCD (Fiducia)
FDG122032C - Monochrome LCD (Fiducia)

Other Datasheets by Fairchild Semiconductor

FDG326P - P-Channel 1.8V Specified PowerTrench MOSFET
FDG327N - 20V N-Channel PowerTrench MOSFET
FDG327NZ - MOSFET
FDG328P - P-Channel 2.5V Specified PowerTrench MOSFET
FDG311N - N-Channel 2.5V Specified PowerTrench MOSFET
FDG312P - P-Channel 2.5V Specified PowerTrench MOSFET

Published: Mar 30, 2005 |