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FDMS0306AS - N-Channel MOSFET

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Max rDS(on) = 2.4 mΩ at VGS = 10 V, ID = 26 A. Max rDS(on) = 3.0 mΩ at VGS = 4.5 V, ID = 23 A. Advanced Package and Silicon Combination for Low rDS(on) and High Efficiency. SyncFET Schottky Body Diode. MSL1 Robust Package Design. 100% UIL Tested. RoHS Compliant The FDMS0306AS has been designed to minimize losses in power conversion application.Advancements in both silicon and package technologies have been combined to offer the l.

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